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| DG201HS Vishay Siliconix High-Speed Quad SPST CMOS Analog Switch DESCRIPTION The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 ) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off. FEATURES * * * * * * * Fast Switching-tON: 38 ns Low On-Resistance: 25 Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: - 30 mA Pb-free Available RoHS* COMPLIANT BENEFITS * * * * * * * Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP) APPLICATIONS * * * * * * * * * Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line, SOIC and TSSOP D1 IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S1 S2 VV+ NC NC S3 D3 IN3 GND S4 7 8 15 14 NC S3 6 16 NC Key 3 4 5 2 1 20 19 18 17 S2 V+ IN1 LCC NC IN2 D2 TRUTH TABLE Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V Switch ON OFF 9 D4 10 IN4 11 12 13 D3 NC IN3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70038 S-71241-Rev. G, 25-Jun-07 www.vishay.com 1 DG201HS Vishay Siliconix ORDERING INFORMATION Temp Range Package 16-Pin Plastic DIP Part Number DG201HSDJ DG201HSDJ-E3 DG201HSDY DG201HSDY-E3 DG201HSDY-T1 DG201HSDY-T1-E3 DG201HSDQ DG201HSDQ-E3 DG201HSDQ-T1 DG201HSDQ-T1-E3 16-Pin Narrow SOIC - 40 to 85 C 16-Pin TSSOP ABSOLUTE MAXIMUM RATINGS Parameter V+ to VGND to VDigital Inputs , VS, VD Continuous Current (Any Terminal) Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (A Suffix) (D Suffix) 16-Pin Plastic DIPc Power Dissipation (Package)b 16-Pin CerDIP LCC-20d d e a Limit 44 25 (V-) - 4 to (V+) + 4 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 900 600 900 Unit V mA C mW 16-Pin Narrow Body SOIC and TSSOP Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/C above 75 C. d. Derate 12 mW/C above 75 C. e. Derate 7.6 mW/C above 75 C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5V Reg Level Shift/ Drive INX VV+ SX DX GND V- Figure 1. www.vishay.com 2 Document Number: 70038 S-71241-Rev. G, 25-Jun-07 DG201HS Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input, High Voltage Input, Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Output Settling Time to 0.1 % Charge Injection Off Isolation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance Drain-to-Source Capacitance Power Supplies Positive Supply Current Negative Supply Current Power Consumptionc I+ IPC V+ = 15 V, V- = - 15 V VIN = 0 or 5 V Room Full Room Full Full 4.5 10 3.5 -6 240 -6 240 mW 10 mA tON tOFF1 tOFF2 ts Q OIRR XTALK CS(off) CD(off) CD(on) CDS(off) VS , VD = 0 V, f = 1 MHz CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 1 k, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 k, CL = 10 pF f = 100 kHz RL = 1 k, CL = 35 pF VS = 10 V, VINH = 3 V See Figure 2 Room Full Room Full Room Room Room Room 48 30 150 180 -5 85 dB Room Room Room Room Room 100 8 8 30 0.5 pF pC 60 75 50 70 60 75 50 70 ID(on) VANALOG rDS(on) IS = - 10 mA, VD = 8.5 V V+ = 13.5 V, V- = - 13.5 V Full Room Full Room Room Full Room Full Room Full Full Full Full VIN under test = 0.8 V, 3 V Full 5 -1 1 -1 1 25 3 0.1 0.1 0.1 VV+ 50 75 -1 - 60 -1 - 60 -1 - 60 2.4 0.8 1 60 1 60 1 60 -1 - 20 -1 - 20 -1 - 20 2.4 0.8 VV+ 50 75 1 20 1 20 1 20 V % Symbol VIN = 3 V, 0.8 Vf Tempb Typc A Suffix - 55 to 125 C Mind Maxd D Suffix - 40 to 85 C Mind Maxd Unit IS(off) V+ = 16.5 V, V- = - 16.5 V VD = 15.5 V VS= 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = 15.5 V nA VINH VINL CIN IINH or IINL V pF A ns Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 C, Full = as determined by the operating temperature suffix. c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70038 S-71241-Rev. G, 25-Jun-07 www.vishay.com 3 DG201HS Vishay Siliconix SPECIFICATIONSa FOR SINGLE SUPPLY Test Conditions Unless Specified V+ = 10.8 V to 16.5 V, Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input, High Voltage Input, Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Output Settling Time to 0.1 % Charge Injection Off Isolation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance Power Supply Positive Supply Current Power Consumptionc tON tOFF1 tOFF2 ts Q OIRR XTALK CS(off) CD(off) CD(on) I+ PC CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 1 k, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 k, CL = 10 pF f = 100 kHz f = 1 MHz VANALOG = 0 V RL = 1 k, CL = 35 pF VS = 2 V, V = 10.8 V See Figure 2 Room Full Room Full Room Room Room Room 50 70 50 70 150 180 10 85 dB Room Room Room Room Full Full 100 10 10 30 10 150 10 150 mA mW pF pC 50 70 50 70 ID(on) + IS(on) VANALOG rDS(on) IS(off) IS = - 10 mA, VD = 8.5 V V+ = 10.8 V V+ = 16.5 V VS= 0.5 V, 10 V VD = 10 V, 0.5 V V+ = 16.5 V VD = 0.5 V, 10 V Full Room Full Room Full Room Full Room Full Full Full Full V+ = 16.5 V VIN under test = 0.8 V, 3 V Full 5 -1 1 -1 1 65 0.1 0.1 0.1 -1 - 60 -1 - 60 -1 - 60 2.4 0.8 0 V+ 90 120 1 60 1 60 1 60 0 V+ 90 120 1 20 1 20 1 20 V Symbol V- = GND = 0 V, VIN = 3 V, 0.8 Vf Tempb Typc A Suffix - 55 to 125 C Mind Maxd D Suffix - 40 to 85 C Mind Maxd Unit -1 - 20 -1 - 20 -1 - 20 2.4 nA VINH VINL CIN IINH or IINL 0.8 V pF A ns V+ = 15 V, VIN = 0 or 5 V Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70038 S-71241-Rev. G, 25-Jun-07 DG201HS Vishay Siliconix TYPICAL CHARACTERISTICS 70 r DS(on) - Drain-Source On-Resistance () 60 50 5V 40 10 V 30 15 V 20 20 V 10 0 - 20 - 16 - 12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) r DS(on) - Drain-Source On-Resistance () 25 C, unless otherwise noted 50 V+ = 15 V V- = - 15 V 40 125 C 30 85 C 25 C 20 0 C - 55 C 10 0 - 15 - 10 -5 0 5 10 15 VD - Drain Voltage (V) rDS(on) vs. VD and Power Supply Voltages 180 r DS(on) - Drain-Source On-Resistance () 160 140 120 100 80 10 V 60 40 20 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 12 V 15 V 7V Leakage 1 nA V+ = 5 V 10 nA rDS(on) vs. VD and Temperature ID(on) 100 pA IS(off), ID(off) 10 pA - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (C) rDS(on) vs. VD and Single Power Supply Voltages 2.5 55 Leakage Currents vs. Temperature 2 Switching Time (ns) 50 V TH (V) 1.5 45 1 40 tON 0.5 35 tOFF 0 4 6 8 10 12 14 16 18 20 Positive Supplies (V) 30 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Input Switching Threshold vs. Supply Voltage Switching Time vs. Power Supply Voltage Document Number: 70038 S-71241-Rev. G, 25-Jun-07 www.vishay.com 5 DG201HS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 45 V+ = 15 V V- = - 15 V 40 Switching Time (ns) 55 35 t ON t OFF (ns) , 50 45 40 25 35 tOFF 20 - 55 - 25 0 25 50 75 100 125 Temperature (C) 30 4 6 8 10 12 14 16 18 20 V+ - Positive Supply (V) tON tON 65 60 30 tOFF Switching Times vs. Temperature 20 V+ = 10.8 V V- = 0 V 45 Switching Time (ns) Chargie Injection (pC) Switching Times vs. Power Supply Voltage 50 V+ = 15 V, V- = 0 V 10 40 tON 0 35 tOFF 30 - 10 V+ = 15 V V- = - 15 V - 20 25 - 30 20 - 55 - 25 0 25 50 75 100 125 - 40 - 15 - 10 -5 0 5 10 15 Temperature (C) VS - Source Voltage (V) Switching Times vs. Temperature 120 110 100 90 OIRR 80 70 60 50 40 10 k RL = 1 k RL = 100 V+ = 15 V V- = - 15 V Charge Injection vs. Source Voltage 100 k 1M 10 M f - Frequency (Hz) Off Isolation vs. Frequency www.vishay.com 6 Document Number: 70038 S-71241-Rev. G, 25-Jun-07 DG201HS Vishay Siliconix TEST CIRCUITS + 15 V V+ 10 V S IN 3V GND VRL 1 k CL 35 pF D VO Logic Input 3V 50 % 0V tOFF1 VS 90 % 10 % tON tOFF2 tr < 20 ns tf < 20 ns Switch Input Switch Output VO - 15 V CL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on) Figure 2. Switching Time + 15 V Rg V+ S IN D CL 1 nF VVO VO VO 3V GND INX SWON OFF - 15 V Q = VO x CL Figure 3. Charge Injection + 15 V C VS V+ VS Rg = 50 IN 0 V, 3 V GND VC RL NC S D VO Rg = 50 0 V, 3 V C + 15 V V+ S1 IN1 S2 D2 RL GND - 15 V - 15 V Off Isolation = 20 log VS VO XTA LK Isolation = 20 log C = RF bypass VS VO VC D1 50 VO 0 V, 3 V IN2 Figure 4. Off Isolation Figure 5. Crosstalk Document Number: 70038 S-71241-Rev. G, 25-Jun-07 www.vishay.com 7 DG201HS Vishay Siliconix APPLICATIONS A high-speed, low-glitch analog switch such as Vishay Siliconix's DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit. Input Buffer VANALOG DG201HS JFET Buffer OUTPUT to A/D Converter Si581 CH (Polystyrene) SAMPLE/HOLD Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70038. www.vishay.com 8 Document Number: 70038 S-71241-Rev. G, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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